| 1. | The thesis mainly investigated the bati _ 4o _ 9 ( bt _ 4 ) , which has the lowest dielectric loss in ba - ti system , and ( ba , sr ) tio _ 3 , the a position substitute compound of batio _ 3 . the dielectric properties of bt _ 4 / bst with different preparation way and different elements doping were investigated . a archimedes method , xrd , sem , impedance analyzer , network analyzer and hakki - coleman method were used to investigate the density , phase formation , microstructure , dielectric properties and doping mechanisms
本论文以在ba - ti系中具有最低介电损耗的bati _ 4o _ 9 ( bt _ 4 )高频介质陶瓷和batio _ 3a位sr取代而得的( ba , sr ) tio _ 3 ( bst )高频介质陶瓷作为研究对象,对不同粉体制备方法制备的bt _ 4 / bst高频电介质材料进行不同元素的掺杂,运用阿基米德方法, x射线衍射分析仪,扫描电子显微镜和阻抗分析仪,网络分析仪, hakki - coleman法等方法手段和测试仪器测试烧成样品的密度,相组成情况,微观结构和介电性能,探讨造成介电性能起伏的形成机理。 |
